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STB80NE03L-06
N-channel 30V - 0.005 - 85A - D2PAK STripFETTM Power MOSFET
General features
Type STB80NE03L-06

VDSS 30V
RDS(on) <0.006
ID 80A
3 1
Exceptional dv/dt capability Low gate charge 100C 100% Avalanche tested
D2PAK
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STB80NE03L-06 Marking B80NE03L Package DPAK Packaging Tape & reel
July 2006
Rev 6
1/13
www.st.com 13
Contents
STB80NE03L-06
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STB80NE03L-06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Derating factor Value 30 30 20 80 60 320 1 150 7 -55 to 175 W V/ns C Unit V V V A A A
PTOT dv/dt
(2)
Total dissipation at TC = 25C Peak diode recovery voltage slope Operating junction temperature Storage temperture
TJ Tstg
1. Pulse width limited by safe operating area 2. ISD < 20A, di/dt < 100A/s, VDD = 80% V(BR)DSS
Table 2.
Symbol RthJC RthJA Tl
Thermal resistance
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1 62.5 300 Unit C/W C/W C
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Max Value 80 600 Unit A mJ
3/13
Electrical characteristics
STB80NE03L-06
2
Electrical characteristics
(TCASE = 25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VDS = 20V VDS= VGS, ID = 250A VGS = 10 V, ID = 40A VGS = 4.5 V, ID = 40A 1 1.7 0.005 Min. 30 1 10 100 2.5 0.006 0.008 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs(1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse Transfer Capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID = 40A VDS = 25V, f = 1 MHz, VGS =0 Min. 30 Typ. 50 6500 1500 500 95 30 44 130 Max. Unit S pF pF pF nC nC nC
VDD = 24 V, ID = 80A, VGS = 5V
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
Table 6.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross over time Test conditions VDD = 15 V, ID = 40 A RG = 4.7 VGS = 4.5 V Figure 12. VDD = 24 V, ID = 80 A, RG = 4.7, VGS = 5V Figure 12. Min. Typ. 40 260 70 165 250 Max. 55 350 95 220 340 Unit ns ns ns ns ns
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STB80NE03L-06
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD = 80 A, di/dt = 100A/s, VDD = 15 V, TJ = 150C Figure 15. 75 0.14 4 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns nC A
1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STB80NE03L-06
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STB80NE03L-06 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
7/13
Test circuit
STB80NE03L-06
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
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STB80NE03L-06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STB80NE03L-06
TO-263 (D2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.23 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068
DIM.
D A
A2
C2
DETAIL "A"
C
DETAIL "A" A1 B2 B
E
G
L2
L
L3
P011P6/F
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STB80NE03L-06
Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
11/13
Revision history
STB80NE03L-06
6
Revision history
Table 8.
Date 21-Jun-2004 25-Jul-2006
Revision history
Revision 5 6 Preliminary version New template, SOA updated Changes
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STB80NE03L-06
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